Asymmetric Electrode Work Function Customization via Top Electrode Replacement in Ferroelectric and Field‐Induced Ferroelectric Hafnium Zirconium Oxide Thin Films

Abstract Non‐volatile memory device structures such as ferroelectric random‐access memory and ferroelectric tunnel junctions employ switchable spontaneous polarization to hold binary states. These devices can potentially benefit from the imposition of spontaneous internal biases and their resulting...

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Detaylı Bibliyografya

Asıl Yazarlar:	Shelby S. Fields, Samantha T. Jaszewski, Megan K. Lenox, Jon F. Ihlefeld
Materyal Türü:	Artigo
Dil:	Inglês
Baskı/Yayın Bilgisi:	Wiley-VCH 2023-03-01
Seri Bilgileri:	Advanced Materials Interfaces
Konular:	ferroelectrics hafnium oxides internal biases memory devices work function customization
Online Erişim:	https://doi.org/10.1002/admi.202202232
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