Asymmetric Electrode Work Function Customization via Top Electrode Replacement in Ferroelectric and Field‐Induced Ferroelectric Hafnium Zirconium Oxide Thin Films

Abstract Non‐volatile memory device structures such as ferroelectric random‐access memory and ferroelectric tunnel junctions employ switchable spontaneous polarization to hold binary states. These devices can potentially benefit from the imposition of spontaneous internal biases and their resulting...

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Autors principals:	Shelby S. Fields, Samantha T. Jaszewski, Megan K. Lenox, Jon F. Ihlefeld
Format:	Artigo
Idioma:	Inglês
Publicat:	Wiley-VCH 2023-03-01
Col·lecció:	Advanced Materials Interfaces
Matèries:	ferroelectrics hafnium oxides internal biases memory devices work function customization
Accés en línia:	https://doi.org/10.1002/admi.202202232
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