Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina Nanolaminates

Silicon semiconductor-insulator-semiconductor (SIS) structures with high-k dielectrics are a promising new material for photonic and CMOS integrations. The “diode-like” currents through the symmetric atomic layer deposited (ALD) HfO(2)/Al(2)O(3)/HfO(2)… nanolayers with a highest rectification coeffi...

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Publicat a:Nanomaterials (Basel)
Autors principals: Popov, Vladimir P., Tikhonenko, Fedor V., Antonov, Valentin A., Tyschenko, Ida E., Miakonkikh, Andrey V., Simakin, Sergey G., Rudenko, Konstantin V.
Format: Artigo
Idioma:Inglês
Publicat: MDPI 2021
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Article
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC7912112/
https://ncbi.nlm.nih.gov/pubmed/33499413
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano11020291
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