A highly CMOS compatible hafnia-based ferroelectric diode

Memory devices with high speed and high density are highly desired to address the ‘memory wall’ issue. Here we demonstrated a highly scalable, three-dimensional stackable ferroelectric diode, with its rectifying polarity modulated by the polarization reversal of Hf(0.5)Zr(0.5)O(2) films. By visualiz...

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Publicat a:Nat Commun
Autors principals: Luo, Qing, Cheng, Yan, Yang, Jianguo, Cao, Rongrong, Ma, Haili, Yang, Yang, Huang, Rong, Wei, Wei, Zheng, Yonghui, Gong, Tiancheng, Yu, Jie, Xu, Xiaoxin, Yuan, Peng, Li, Xiaoyan, Tai, Lu, Yu, Haoran, Shang, Dashan, Liu, Qi, Yu, Bing, Ren, Qiwei, Lv, Hangbing, Liu, Ming
Format: Artigo
Idioma:Inglês
Publicat: Nature Publishing Group UK 2020
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Article
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC7070068/
https://ncbi.nlm.nih.gov/pubmed/32170177
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-020-15159-2
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