Back‐End CMOS Compatible and Flexible Ferroelectric Memories for Neuromorphic Computing and Adaptive Sensing

Development of unconventional computing architectures, including neuromorphic computing, relies heavily on novel devices with properly engineered properties. This requires exploration of new functional materials and their designed interfaces. Ferroelectric memories including two‐terminal ferroelectr...

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Autor principal: Sayani Majumdar
Formato: Artigo
Idioma:Inglês
Publicado em: Wiley 2022-04-01
Colecção:Advanced Intelligent Systems
Assuntos:
adaptive sensing
edge computing
electronic synapses
ferroelectric field-effect transistors
ferroelectric tunnel junctions
neuromorphic computing
Acesso em linha:https://doi.org/10.1002/aisy.202100175
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