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Sub-nanosecond memristor based on ferroelectric tunnel junction
Next-generation non-volatile memories with ultrafast speed, low power consumption, and high density are highly desired in the era of big data. Here, we report a high performance memristor based on a Ag/BaTiO(3)/Nb:SrTiO(3) ferroelectric tunnel junction (FTJ) with the fastest operation speed (600 ps)...
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| 出版年: | Nat Commun |
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| 主要な著者: | , , , , , , , , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Nature Publishing Group UK
2020
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7080735/ https://ncbi.nlm.nih.gov/pubmed/32188861 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-020-15249-1 |
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