Tunnel junction based memristors as artificial synapses

We prepared magnesia, tantalum oxide, and barium titanate based tunnel junction structures and investigated their memristive properties. The low amplitudes of the resistance change in these types of junctions are the major obstacle for their use. Here, we increased the amplitude of the resistance ch...

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Bibliografski detalji
Izdano u:Front Neurosci
Glavni autori: Thomas, Andy, Niehörster, Stefan, Fabretti, Savio, Shepheard, Norman, Kuschel, Olga, Küpper, Karsten, Wollschläger, Joachim, Krzysteczko, Patryk, Chicca, Elisabetta
Format: Artigo
Jezik:Inglês
Izdano: Frontiers Media S.A. 2015
Teme:
Neuroscience
Online pristup:https://ncbi.nlm.nih.gov/pmc/articles/PMC4493388/
https://ncbi.nlm.nih.gov/pubmed/26217173
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3389/fnins.2015.00241
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