Tunnel junction based memristors as artificial synapses

We prepared magnesia, tantalum oxide, and barium titanate based tunnel junction structures and investigated their memristive properties. The low amplitudes of the resistance change in these types of junctions are the major obstacle for their use. Here, we increased the amplitude of the resistance ch...

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Detalhes bibliográficos
Publicado no:Front Neurosci
Main Authors: Thomas, Andy, Niehörster, Stefan, Fabretti, Savio, Shepheard, Norman, Kuschel, Olga, Küpper, Karsten, Wollschläger, Joachim, Krzysteczko, Patryk, Chicca, Elisabetta
Formato: Artigo
Idioma:Inglês
Publicado em: Frontiers Media S.A. 2015
Assuntos:
Neuroscience
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4493388/
https://ncbi.nlm.nih.gov/pubmed/26217173
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3389/fnins.2015.00241
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