Tunnel junction based memristors as artificial synapses

We prepared magnesia, tantalum oxide, and barium titanate based tunnel junction structures and investigated their memristive properties. The low amplitudes of the resistance change in these types of junctions are the major obstacle for their use. Here, we increased the amplitude of the resistance ch...

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Detalles Bibliográficos
Publicado en:Front Neurosci
Autores principales: Thomas, Andy, Niehörster, Stefan, Fabretti, Savio, Shepheard, Norman, Kuschel, Olga, Küpper, Karsten, Wollschläger, Joachim, Krzysteczko, Patryk, Chicca, Elisabetta
Formato: Artigo
Lenguaje:Inglês
Publicado: Frontiers Media S.A. 2015
Materias:
Neuroscience
Acceso en línea:https://ncbi.nlm.nih.gov/pmc/articles/PMC4493388/
https://ncbi.nlm.nih.gov/pubmed/26217173
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3389/fnins.2015.00241
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