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Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing
Spin‐torque memristors are proposed in 2009, and can provide fast, low‐power, and infinite memristive behavior for neuromorphic computing and large‐density non‐volatile memory. However, the strict requirements of combining high magnetoresistance, stable domain wall pinning and current‐induced switch...
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| 發表在: | Adv Sci (Weinh) |
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| Main Authors: | , , , , , , , , , , , , , |
| 格式: | Artigo |
| 語言: | Inglês |
| 出版: |
John Wiley and Sons Inc.
2021
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| 主題: | |
| 在線閱讀: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8132064/ https://ncbi.nlm.nih.gov/pubmed/34026457 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.202004645 |
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