Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing

Spin‐torque memristors are proposed in 2009, and can provide fast, low‐power, and infinite memristive behavior for neuromorphic computing and large‐density non‐volatile memory. However, the strict requirements of combining high magnetoresistance, stable domain wall pinning and current‐induced switch...

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Veröffentlicht in:Adv Sci (Weinh)
Hauptverfasser: Zhang, Xueying, Cai, Wenlong, Wang, Mengxing, Pan, Biao, Cao, Kaihua, Guo, Maosen, Zhang, Tianrui, Cheng, Houyi, Li, Shaoxin, Zhu, Daoqian, Wang, Lin, Shi, Fazhan, Du, Jiangfeng, Zhao, Weisheng
Format: Artigo
Sprache:Inglês
Veröffentlicht: John Wiley and Sons Inc. 2021
Schlagworte:
Research Articles
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC8132064/
https://ncbi.nlm.nih.gov/pubmed/34026457
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.202004645
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