Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing

Spin‐torque memristors are proposed in 2009, and can provide fast, low‐power, and infinite memristive behavior for neuromorphic computing and large‐density non‐volatile memory. However, the strict requirements of combining high magnetoresistance, stable domain wall pinning and current‐induced switch...

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Dettagli Bibliografici
Pubblicato in:Adv Sci (Weinh)
Autori principali: Zhang, Xueying, Cai, Wenlong, Wang, Mengxing, Pan, Biao, Cao, Kaihua, Guo, Maosen, Zhang, Tianrui, Cheng, Houyi, Li, Shaoxin, Zhu, Daoqian, Wang, Lin, Shi, Fazhan, Du, Jiangfeng, Zhao, Weisheng
Natura: Artigo
Lingua:Inglês
Pubblicazione: John Wiley and Sons Inc. 2021
Soggetti:
Research Articles
Accesso online:https://ncbi.nlm.nih.gov/pmc/articles/PMC8132064/
https://ncbi.nlm.nih.gov/pubmed/34026457
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.202004645
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