Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing

Spin‐torque memristors are proposed in 2009, and can provide fast, low‐power, and infinite memristive behavior for neuromorphic computing and large‐density non‐volatile memory. However, the strict requirements of combining high magnetoresistance, stable domain wall pinning and current‐induced switch...

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保存先:
書誌詳細
出版年:Adv Sci (Weinh)
主要な著者: Zhang, Xueying, Cai, Wenlong, Wang, Mengxing, Pan, Biao, Cao, Kaihua, Guo, Maosen, Zhang, Tianrui, Cheng, Houyi, Li, Shaoxin, Zhu, Daoqian, Wang, Lin, Shi, Fazhan, Du, Jiangfeng, Zhao, Weisheng
フォーマット: Artigo
言語:Inglês
出版事項: John Wiley and Sons Inc. 2021
主題:
Research Articles
オンライン･アクセス:https://ncbi.nlm.nih.gov/pmc/articles/PMC8132064/
https://ncbi.nlm.nih.gov/pubmed/34026457
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.202004645
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