Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing

Spin‐torque memristors are proposed in 2009, and can provide fast, low‐power, and infinite memristive behavior for neuromorphic computing and large‐density non‐volatile memory. However, the strict requirements of combining high magnetoresistance, stable domain wall pinning and current‐induced switch...

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Dades bibliogràfiques
Publicat a:Adv Sci (Weinh)
Autors principals: Zhang, Xueying, Cai, Wenlong, Wang, Mengxing, Pan, Biao, Cao, Kaihua, Guo, Maosen, Zhang, Tianrui, Cheng, Houyi, Li, Shaoxin, Zhu, Daoqian, Wang, Lin, Shi, Fazhan, Du, Jiangfeng, Zhao, Weisheng
Format: Artigo
Idioma:Inglês
Publicat: John Wiley and Sons Inc. 2021
Matèries:
Research Articles
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC8132064/
https://ncbi.nlm.nih.gov/pubmed/34026457
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.202004645
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