Spin‐Torque Memristors: Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing (Adv. Sci. 10/2021)

In article number 2004645, Weisheng Zhao and co‐workers develop a nano‐scale memristor device based on magnetic tunneling junction. A kind of chiral vortex spin texture plays a key role in forming the multi‐level magnetoresistance. Thanks to its advantages such as long endurance and high speed, this...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Julkaisussa:Adv Sci (Weinh)
Päätekijät: Zhang, Xueying, Cai, Wenlong, Wang, Mengxing, Pan, Biao, Cao, Kaihua, Guo, Maosen, Zhang, Tianrui, Cheng, Houyi, Li, Shaoxin, Zhu, Daoqian, Wang, Lin, Shi, Fazhan, Du, Jiangfeng, Zhao, Weisheng
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: John Wiley and Sons Inc. 2021
Aiheet:
Inside Back Cover
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC8132055/
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.202170056
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