Ferroelectric Domain Wall Memristor

A domain wall‐enabled memristor is created, in thin film lithium niobate capacitors, which shows up to twelve orders of magnitude variation in resistance. Such dramatic changes are caused by the injection of strongly inclined conducting ferroelectric domain walls, which provide conduits for current...

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Detalhes bibliográficos
Publicado no:Adv Funct Mater
Main Authors: McConville, James P. V., Lu, Haidong, Wang, Bo, Tan, Yueze, Cochard, Charlotte, Conroy, Michele, Moore, Kalani, Harvey, Alan, Bangert, Ursel, Chen, Long‐Qing, Gruverman, Alexei, Gregg, J. Marty
Formato: Artigo
Idioma:Inglês
Publicado em: John Wiley and Sons Inc. 2020
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Full Papers
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC7357591/
https://ncbi.nlm.nih.gov/pubmed/32684905
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/adfm.202000109
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