Ferroelectric Domain Wall Memristor

A domain wall‐enabled memristor is created, in thin film lithium niobate capacitors, which shows up to twelve orders of magnitude variation in resistance. Such dramatic changes are caused by the injection of strongly inclined conducting ferroelectric domain walls, which provide conduits for current...

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Detalles Bibliográficos
Publicado en:Adv Funct Mater
Autores principales: McConville, James P. V., Lu, Haidong, Wang, Bo, Tan, Yueze, Cochard, Charlotte, Conroy, Michele, Moore, Kalani, Harvey, Alan, Bangert, Ursel, Chen, Long‐Qing, Gruverman, Alexei, Gregg, J. Marty
Formato: Artigo
Lenguaje:Inglês
Publicado: John Wiley and Sons Inc. 2020
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Full Papers
Acceso en línea:https://ncbi.nlm.nih.gov/pmc/articles/PMC7357591/
https://ncbi.nlm.nih.gov/pubmed/32684905
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/adfm.202000109
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