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A FinFET with one atomic layer channel
Since its invention in the 1960s, one of the most significant evolutions of metal-oxide-semiconductor field effect transistors (MOS-FETs) would be the three dimensionalized version that makes the semiconducting channel vertically wrapped by conformal gate electrodes, also recognized as FinFET. Durin...
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| Publicado en: | Nat Commun |
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| Main Authors: | , , , , , , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Nature Publishing Group UK
2020
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7058032/ https://ncbi.nlm.nih.gov/pubmed/32139679 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-020-15096-0 |
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