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Novel 14-nm Scallop-Shaped FinFETs (S-FinFETs) on Bulk-Si Substrate
In this study, novel p-type scallop-shaped fin field-effect transistors (S-FinFETs) are fabricated using an all-last high-k/metal gate (HKMG) process on bulk-silicon (Si) substrates for the first time. In combination with the structure advantage of conventional Si nanowires, the proposed S-FinFETs p...
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| Publicado no: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4456591/ https://ncbi.nlm.nih.gov/pubmed/26055484 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0958-4 |
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