Carregant...
Novel 14-nm Scallop-Shaped FinFETs (S-FinFETs) on Bulk-Si Substrate
In this study, novel p-type scallop-shaped fin field-effect transistors (S-FinFETs) are fabricated using an all-last high-k/metal gate (HKMG) process on bulk-silicon (Si) substrates for the first time. In combination with the structure advantage of conventional Si nanowires, the proposed S-FinFETs p...
Guardat en:
| Publicat a: | Nanoscale Res Lett |
|---|---|
| Autors principals: | , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer US
2015
|
| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4456591/ https://ncbi.nlm.nih.gov/pubmed/26055484 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0958-4 |
| Etiquetes: |
Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!
|