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Fabrication, characterization and simulation of Ω-gate twin poly-Si FinFET nonvolatile memory
This study proposed the twin poly-Si fin field-effect transistor (FinFET) nonvolatile memory with a structure that is composed of Ω-gate nanowires (NWs). Experimental results show that the NW device has superior memory characteristics because its Ω-gate structure provides a large memory window and h...
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| Main Authors: | , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2013
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3733706/ https://ncbi.nlm.nih.gov/pubmed/23875863 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-331 |
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