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3D modeling of dual-gate FinFET
The tendency to have better control of the flow of electrons in a channel of field-effect transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field plates in a variety of metal semiconductor field-effect transistors and high electron mobility transistors, and...
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| Main Authors: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2012
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3533946/ https://ncbi.nlm.nih.gov/pubmed/23148493 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-625 |
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