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3D modeling of dual-gate FinFET

The tendency to have better control of the flow of electrons in a channel of field-effect transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field plates in a variety of metal semiconductor field-effect transistors and high electron mobility transistors, and...

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Detalles Bibliográficos
Main Authors: Mil’shtein, Samson, Devarakonda, Lalitha, Zanchi, Brian, Palma, John
Formato: Artigo
Idioma:Inglês
Publicado: Springer 2012
Assuntos:
Acceso en liña:https://ncbi.nlm.nih.gov/pmc/articles/PMC3533946/
https://ncbi.nlm.nih.gov/pubmed/23148493
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-625
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