A single poly-Si gate-all-around junctionless fin field-effect transistor for use in one-time programming nonvolatile memory

This work demonstrates a feasible single poly-Si gate-all-around (GAA) junctionless fin field-effect transistor (JL-FinFET) for use in one-time programming (OTP) nonvolatile memory (NVM) applications. The advantages of this device include the simplicity of its use and the ease with which it can be e...

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Vydáno v:Nanoscale Res Lett
Hlavní autoři: Yeh, Mu-Shih, Wu, Yung-Chun, Liu, Kuan-Cheng, Chung, Ming-Hsien, Jhan, Yi-Ruei, Hung, Min-Feng, Chen, Lun-Chun
Médium: Artigo
Jazyk:Inglês
Vydáno: Springer 2014
Témata:
Nano Express
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC4232527/
https://ncbi.nlm.nih.gov/pubmed/25404873
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-603
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