A FinFET with one atomic layer channel

Since its invention in the 1960s, one of the most significant evolutions of metal-oxide-semiconductor field effect transistors (MOS-FETs) would be the three dimensionalized version that makes the semiconducting channel vertically wrapped by conformal gate electrodes, also recognized as FinFET. Durin...

Popoln opis

Shranjeno v:
Bibliografske podrobnosti
izdano v:Nat Commun
Main Authors: Chen, Mao-Lin, Sun, Xingdan, Liu, Hang, Wang, Hanwen, Zhu, Qianbing, Wang, Shasha, Du, Haifeng, Dong, Baojuan, Zhang, Jing, Sun, Yun, Qiu, Song, Alava, Thomas, Liu, Song, Sun, Dong-Ming, Han, Zheng
Format: Artigo
Jezik:Inglês
Izdano: Nature Publishing Group UK 2020
Teme:
Article
Online dostop:https://ncbi.nlm.nih.gov/pmc/articles/PMC7058032/
https://ncbi.nlm.nih.gov/pubmed/32139679
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-020-15096-0
Oznake: Označite
Brez oznak, prvi označite!

Podobne knjige/članki