A FinFET with one atomic layer channel

Since its invention in the 1960s, one of the most significant evolutions of metal-oxide-semiconductor field effect transistors (MOS-FETs) would be the three dimensionalized version that makes the semiconducting channel vertically wrapped by conformal gate electrodes, also recognized as FinFET. Durin...

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Detalhes bibliográficos
Publicado no:Nat Commun
Main Authors: Chen, Mao-Lin, Sun, Xingdan, Liu, Hang, Wang, Hanwen, Zhu, Qianbing, Wang, Shasha, Du, Haifeng, Dong, Baojuan, Zhang, Jing, Sun, Yun, Qiu, Song, Alava, Thomas, Liu, Song, Sun, Dong-Ming, Han, Zheng
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group UK 2020
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Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC7058032/
https://ncbi.nlm.nih.gov/pubmed/32139679
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-020-15096-0
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