Loading...

Diamond FinFET without Hydrogen Termination

In this letter we report the first diamond fin field-effect transistor (diamond FinFET) without a hydrogen-terminated channel. The device operates with hole accumulation by metal-oxide-semiconductor (MOS) structures built on fins to maintain effective control of the channel conduction. Devices with...

Full description

Saved in:
Bibliographic Details
Published in:Sci Rep
Main Authors: Huang, Biqin, Bai, Xiwei, Lam, Stephen K., Tsang, Kenneth K.
Format: Artigo
Language:Inglês
Published: Nature Publishing Group UK 2018
Subjects:
Online Access:https://ncbi.nlm.nih.gov/pmc/articles/PMC5814511/
https://ncbi.nlm.nih.gov/pubmed/29449602
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-20803-5
Tags: Add Tag
No Tags, Be the first to tag this record!