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Diamond lateral FinFET with triode-like behavior
In this letter we report a diamond lateral FinFET fabricated using an ohmic regrowth technique. The use of ohmic regrowth separates the source/drain and gate fabrication, providing a viable means to improve ohmic contact resistance while protecting the top surface of the diamond channel from dry etc...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7010734/ https://ncbi.nlm.nih.gov/pubmed/32042009 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-59049-5 |
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