ロード中...
Diamond FinFET without Hydrogen Termination
In this letter we report the first diamond fin field-effect transistor (diamond FinFET) without a hydrogen-terminated channel. The device operates with hole accumulation by metal-oxide-semiconductor (MOS) structures built on fins to maintain effective control of the channel conduction. Devices with...
保存先:
| 出版年: | Sci Rep |
|---|---|
| 主要な著者: | , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Nature Publishing Group UK
2018
|
| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5814511/ https://ncbi.nlm.nih.gov/pubmed/29449602 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-20803-5 |
| タグ: |
タグ追加
タグなし, このレコードへの初めてのタグを付けませんか!
|