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Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs
Ultra-low contact resistance at the interface between NiGe and p-Ge, i.e., NiGe/p-Ge was achieved by introducing terbium (Tb) as an interlayer in forming NiGe using Tb/Ni/TiN structure. The contact resistance value obtained using the circular transmission line model for an 8-nm thick Tb interlayer s...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7055356/ https://ncbi.nlm.nih.gov/pubmed/32132595 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-61011-4 |
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