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Ge pMOSFETs with GeO(x) Passivation Formed by Ozone and Plasma Post Oxidation
A comparison study on electrical performance of Ge pMOSFETs with a GeO(x) passivation layer formed by ozone post oxidation (OPO) and plasma post oxidation (PPO) is performed. PPO and OPO were carried out on an Al(2)O(3)/n-Ge (001) substrate followed by a 5-nm HfO(2) gate dielectric in situ deposited...
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| Veröffentlicht in: | Nanoscale Res Lett |
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| Hauptverfasser: | , , , , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Springer US
2019
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6450985/ https://ncbi.nlm.nih.gov/pubmed/30953229 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-2958-2 |
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