Ge pMOSFETs with GeO(x) Passivation Formed by Ozone and Plasma Post Oxidation

A comparison study on electrical performance of Ge pMOSFETs with a GeO(x) passivation layer formed by ozone post oxidation (OPO) and plasma post oxidation (PPO) is performed. PPO and OPO were carried out on an Al(2)O(3)/n-Ge (001) substrate followed by a 5-nm HfO(2) gate dielectric in situ deposited...

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Detaylı Bibliyografya
Yayımlandı:Nanoscale Res Lett
Asıl Yazarlar: Xu, Yang, Han, Genquan, Liu, Huan, Wang, Yibo, Liu, Yan, Ao, Jinping, Hao, Yue
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: Springer US 2019
Konular:
Nano Express
Online Erişim:https://ncbi.nlm.nih.gov/pmc/articles/PMC6450985/
https://ncbi.nlm.nih.gov/pubmed/30953229
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-2958-2
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