Loading...
Ge pMOSFETs with GeO(x) Passivation Formed by Ozone and Plasma Post Oxidation
A comparison study on electrical performance of Ge pMOSFETs with a GeO(x) passivation layer formed by ozone post oxidation (OPO) and plasma post oxidation (PPO) is performed. PPO and OPO were carried out on an Al(2)O(3)/n-Ge (001) substrate followed by a 5-nm HfO(2) gate dielectric in situ deposited...
Na minha lista:
| Udgivet i: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Springer US
2019
|
| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6450985/ https://ncbi.nlm.nih.gov/pubmed/30953229 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-2958-2 |
| Tags: |
Tilføj Tag
Ingen Tags, Vær først til at tagge denne postø!
|