Eadi, S. B., Lee, J. C., Song, H., Oh, J., Lee, G., & Lee, H. (2020). Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs. Sci Rep.

Eadi, Sunil Babu, Jeong Chan Lee, Hyeong-Sub Song, Jungwoo Oh, Ga-Won Lee, und Hi-Deok Lee. "Effective Schottky Barrier Lowering of NiGe/p-Ge(100) Using Terbium Interlayer Structure for High Performance P-type MOSFETs." Sci Rep 2020.

Eadi, Sunil Babu, et al. "Effective Schottky Barrier Lowering of NiGe/p-Ge(100) Using Terbium Interlayer Structure for High Performance P-type MOSFETs." Sci Rep 2020.