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Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel
In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si(0.57)Ge(0.43)/Si) through microwave annealing...
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| 出版年: | Materials (Basel) |
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| 主要な著者: | , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
MDPI
2015
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5458906/ https://ncbi.nlm.nih.gov/pubmed/28793654 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma8115403 |
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