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Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing
Dopant-segregated source/drain contacts in a p-channel Schottky-barrier metal-oxide semiconductor field-effect transistor (SB-MOSFET) require further hole Schottky barrier height (SBH) regulation toward sub-0.1 eV levels to improve their competitiveness with conventional field-effect transistors. Be...
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| Veröffentlicht in: | Materials (Basel) |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
MDPI
2018
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5951317/ https://ncbi.nlm.nih.gov/pubmed/29565304 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma11040471 |
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