Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: their impact on SiGe light emission

Fast optical interconnects together with an associated light emitter that are both compatible with conventional Si-based complementary metal-oxide- semiconductor (CMOS) integrated circuit technology is an unavoidable requirement for the next-generation microprocessors and computers. Self-assembled S...

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Main Authors: David J. Lockwood, Xiaohua eWu, Jean-Marc eBaribeau, Selina A. Mala, Xialou eWang, Leonid eTsybeskov
Formato: Artigo
Idioma:Inglês
Publicado em: Frontiers Media S.A. 2016-03-01
Colecção:Frontiers in Materials
Assuntos:
Germanium
Nanostructures
Silicon
Quantum wells
interfaces
Quantum dots
Acesso em linha:http://journal.frontiersin.org/Journal/10.3389/fmats.2016.00012/full
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