Loading...
Strained MOSFETs on ordered SiGe dots
The potential of strained DOTFET technology is demonstrated. This technology uses a SiGe island as a stressor for a Si capping layer, into which the transistor channel is integrated. The structure information of fabricated samples is extracted from atomic force microscopy (AFM) measurements. Strain...
Na minha lista:
| Main Authors: | , , , , , , , , , , |
|---|---|
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Pergamon Press
2011
|
| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3197885/ https://ncbi.nlm.nih.gov/pubmed/22180668 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1016/j.sse.2011.06.041 |
| Tags: |
Tilføj Tag
Ingen Tags, Vær først til at tagge denne postø!
|