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Strained MOSFETs on ordered SiGe dots
The potential of strained DOTFET technology is demonstrated. This technology uses a SiGe island as a stressor for a Si capping layer, into which the transistor channel is integrated. The structure information of fabricated samples is extracted from atomic force microscopy (AFM) measurements. Strain...
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| Main Authors: | , , , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Pergamon Press
2011
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3197885/ https://ncbi.nlm.nih.gov/pubmed/22180668 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1016/j.sse.2011.06.041 |
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