लोड हो रहा है...
Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots
In-situ annealing at a high temperature of 640°C was performed for a low temperature grown Si capping layer, which was grown at 300°C on SiGe self-assembled quantum dots with a thickness of 50 nm. Square nanopits, with a depth of about 8 nm and boundaries along 〈110〉, are formed in the Si capping la...
में बचाया:
| मुख्य लेखकों: | , , , , , , |
|---|---|
| स्वरूप: | Artigo |
| भाषा: | Inglês |
| प्रकाशित: |
Springer
2010
|
| विषय: | |
| ऑनलाइन पहुंच: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3212206/ https://ncbi.nlm.nih.gov/pubmed/27502681 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-010-9811-y |
| टैग : |
टैग जोड़ें
कोई टैग नहीं, इस रिकॉर्ड को टैग करने वाले पहले व्यक्ति बनें!
|