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Initial stage growth of Ge(x)Si(1−x) layers and Ge quantum dot formation on Ge(x)Si(1−x) surface by MBE
Critical thicknesses of two-dimensional to three-dimensional growth in Ge(x)Si(1−x) layers were measured as a function of composition for different growth temperatures. In addition to the (2 × 1) superstructure for a Ge film grown on Si(100), the Ge(x)Si(1−x) layers are characterized by the formatio...
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| Autors principals: | , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer
2012
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3492111/ https://ncbi.nlm.nih.gov/pubmed/23043796 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-561 |
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