Načítá se...
Photovoltaic Ge/Si quantum dot detectors operating in the mid-wave atmospheric window (3 to 5 μm)
Ge/Si quantum dots fabricated by molecular-beam epitaxy at 500°C are overgrown with Si at different temperatures T(cap), and effect of boron delta doping of Si barriers on the mid-infrared photoresponse was investigated. The photocurrent maximum shifts from 2.3 to 3.9 μm with increasing T(cap)from 3...
Uloženo v:
| Hlavní autoři: | , , , , |
|---|---|
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Springer
2012
|
| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3499146/ https://ncbi.nlm.nih.gov/pubmed/22938028 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-494 |
| Tagy: |
Přidat tag
Žádné tagy, Buďte první, kdo otaguje tento záznam!
|