Influence of delta-doping on the hole capture probability in Ge/Si quantum dot mid-infrared photodetectors

We study the effect of delta-doping on the hole capture probability in ten-period p-type Ge quantum dot photodetectors. The boron concentration in the delta-doping layers is varied by either passivation of a sample in a hydrogen plasma or by direct doping during the molecular beam epitaxy. The devic...

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Bibliografiske detaljer
Main Authors: Yakimov, Andrew, Kirienko, Victor, Timofeev, Vyacheslav, Bloshkin, Aleksei, Dvurechenskii, Anatolii
Format: Artigo
Sprog:Inglês
Udgivet: Springer 2014
Fag:
Nano Express
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC4171572/
https://ncbi.nlm.nih.gov/pubmed/25249825
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-504
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