Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots

This work presents results of investigation of Ge/Si p-i-n structures with Ge quantum dots in the i-region by the method of admittance spectroscopy. The structures contain multiple layers with Ge quantum dots separated by thin 5 nm layers of Si in the intrinsic region. Two peaks are observed on the...

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Detalhes bibliográficos
Publicado no:Nanoscale Res Lett
Main Authors: Izhnin, Ihor I., Fitsych, Olena I., Pishchagin, Anton A., Kokhanenko, Andrei P., Voitsekhovskii, Alexander V., Dzyadukh, Stanislav M., Nikiforov, Alexander I.
Formato: Artigo
Idioma:Inglês
Publicado em: Springer US 2017
Assuntos:
Nano Express
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5318315/
https://ncbi.nlm.nih.gov/pubmed/28235368
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-1916-0
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