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Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel
In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si(0.57)Ge(0.43)/Si) through microwave annealing...
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| Udgivet i: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
MDPI
2015
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5458906/ https://ncbi.nlm.nih.gov/pubmed/28793654 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma8115403 |
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