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Hole spins in an InAs/GaAs quantum dot molecule subject to lateral electric fields

There has been tremendous progress in manipulating electron and hole-spin states in quantum dots or quantum dot molecules (QDMs) with growth-direction (vertical) electric fields and optical excitations. However, the response of carriers in QDMs to an in-plane (lateral) electric field remains largely...

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Bibliografski detalji
Izdano u:Phys Rev B
Glavni autori: Ma, Xiangyu, Bryant, Garnett W., Doty, Matthew F.
Format: Artigo
Jezik:Inglês
Izdano: 2016
Teme:
Online pristup:https://ncbi.nlm.nih.gov/pmc/articles/PMC7047739/
https://ncbi.nlm.nih.gov/pubmed/32118123
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1103/physrevb.93.245402
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