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Hole spins in an InAs/GaAs quantum dot molecule subject to lateral electric fields
There has been tremendous progress in manipulating electron and hole-spin states in quantum dots or quantum dot molecules (QDMs) with growth-direction (vertical) electric fields and optical excitations. However, the response of carriers in QDMs to an in-plane (lateral) electric field remains largely...
Tallennettuna:
| Julkaisussa: | Phys Rev B |
|---|---|
| Päätekijät: | , , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
2016
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7047739/ https://ncbi.nlm.nih.gov/pubmed/32118123 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1103/physrevb.93.245402 |
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