Giant Electroresistance in Ferroionic Tunnel Junctions

Oxide-based resistive switching devices, including ferroelectric tunnel junctions and resistance random access memory, are promising candidates for the next-generation non-volatile memory technology. In this work, we propose a ferroionic tunnel junction to realize a giant electroresistance. It funct...

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Publicat a:iScience
Autors principals: Li, Jiankun, Li, Ning, Ge, Chen, Huang, Heyi, Sun, Yuanwei, Gao, Peng, He, Meng, Wang, Can, Yang, Guozhen, Jin, Kuijuan
Format: Artigo
Idioma:Inglês
Publicat: Elsevier 2019
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Article
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC6584484/
https://ncbi.nlm.nih.gov/pubmed/31220760
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1016/j.isci.2019.05.043
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