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Giant Electroresistance in Ferroionic Tunnel Junctions
Oxide-based resistive switching devices, including ferroelectric tunnel junctions and resistance random access memory, are promising candidates for the next-generation non-volatile memory technology. In this work, we propose a ferroionic tunnel junction to realize a giant electroresistance. It funct...
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| Udgivet i: | iScience |
|---|---|
| Main Authors: | , , , , , , , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Elsevier
2019
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6584484/ https://ncbi.nlm.nih.gov/pubmed/31220760 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1016/j.isci.2019.05.043 |
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