Giant Electroresistance in Ferroionic Tunnel Junctions

Oxide-based resistive switching devices, including ferroelectric tunnel junctions and resistance random access memory, are promising candidates for the next-generation non-volatile memory technology. In this work, we propose a ferroionic tunnel junction to realize a giant electroresistance. It funct...

Fuld beskrivelse

Na minha lista:

Bibliografiske detaljer
Udgivet i:	iScience
Main Authors:	Li, Jiankun, Li, Ning, Ge, Chen, Huang, Heyi, Sun, Yuanwei, Gao, Peng, He, Meng, Wang, Can, Yang, Guozhen, Jin, Kuijuan
Format:	Artigo
Sprog:	Inglês
Udgivet:	Elsevier 2019
Fag:	Article
Online adgang:	https://ncbi.nlm.nih.gov/pmc/articles/PMC6584484/ https://ncbi.nlm.nih.gov/pubmed/31220760 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1016/j.isci.2019.05.043
Tags:	Tilføj Tag Ingen Tags, Vær først til at tagge denne postø!

Giant Electroresistance in Ferroionic Tunnel Junctions

Lignende værker