Loading...
Low-Power Resistive Switching Characteristic in HfO(2)/TiO(x) Bi-Layer Resistive Random-Access Memory
Resistive random-access memory devices with atomic layer deposition HfO(2) and radio frequency sputtering TiO(x) as resistive switching layers were fabricated successfully. Low-power characteristic with 1.52 μW set power (1 μA@1.52 V) and 1.12 μW reset power (1 μA@1.12 V) was obtained in the HfO(2)/...
Na minha lista:
| Udgivet i: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Springer US
2019
|
| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6509306/ https://ncbi.nlm.nih.gov/pubmed/31073774 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-2956-4 |
| Tags: |
Tilføj Tag
Ingen Tags, Vær først til at tagge denne postø!
|