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Low-Power Resistive Switching Characteristic in HfO(2)/TiO(x) Bi-Layer Resistive Random-Access Memory
Resistive random-access memory devices with atomic layer deposition HfO(2) and radio frequency sputtering TiO(x) as resistive switching layers were fabricated successfully. Low-power characteristic with 1.52 μW set power (1 μA@1.52 V) and 1.12 μW reset power (1 μA@1.12 V) was obtained in the HfO(2)/...
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| Publicado no: | Nanoscale Res Lett |
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| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6509306/ https://ncbi.nlm.nih.gov/pubmed/31073774 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-2956-4 |
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