APA Zitierstil

Ding, X., Feng, Y., Huang, P., Liu, L., & Kang, J. (2019). Low-Power Resistive Switching Characteristic in HfO(2)/TiO(x) Bi-Layer Resistive Random-Access Memory. Nanoscale Res Lett.

Chicago Zitierstil

Ding, Xiangxiang, Yulin Feng, Peng Huang, Lifeng Liu, und Jinfeng Kang. "Low-Power Resistive Switching Characteristic in HfO(2)/TiO(x) Bi-Layer Resistive Random-Access Memory." Nanoscale Res Lett 2019.

MLA Zitierstil

Ding, Xiangxiang, et al. "Low-Power Resistive Switching Characteristic in HfO(2)/TiO(x) Bi-Layer Resistive Random-Access Memory." Nanoscale Res Lett 2019.

Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.