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Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures
Since the first demonstration of lasing in direct bandgap GeSn semiconductors, the research efforts for the realization of electrically pumped group IV lasers monolithically integrated on Si have significantly intensified. This led to epitaxial studies of GeSn/SiGeSn hetero- and nanostructures, wher...
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| Publicado en: | Sci Rep |
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| Autores principales: | , , , , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Nature Publishing Group UK
2018
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6197271/ https://ncbi.nlm.nih.gov/pubmed/30348982 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-33820-1 |
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