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Impact of tensile strain on low Sn content GeSn lasing
In recent years much effort has been made to increase the Sn content in GeSn alloys in order to increase direct bandgap charge carrier recombination and, therefore, to reach room temperature lasing. While being successful for the former, the increase of Sn content is detrimental, leading to increase...
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| Udgivet i: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Nature Publishing Group UK
2019
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6342923/ https://ncbi.nlm.nih.gov/pubmed/30670785 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-36837-8 |
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