Advanced GeSn/SiGeSn Group IV Heterostructure Lasers

Growth and characterization of advanced group IV semiconductor materials with CMOS‐compatible applications are demonstrated, both in photonics. The investigated GeSn/SiGeSn heterostructures combine direct bandgap GeSn active layers with indirect gap ternary SiGeSn claddings, a design proven its wort...

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Detalhes bibliográficos
Publicado no:Adv Sci (Weinh)
Main Authors: von den Driesch, Nils, Stange, Daniela, Rainko, Denis, Povstugar, Ivan, Zaumseil, Peter, Capellini, Giovanni, Schröder, Thomas, Denneulin, Thibaud, Ikonic, Zoran, Hartmann, Jean‐Michel, Sigg, Hans, Mantl, Siegfried, Grützmacher, Detlev, Buca, Dan
Formato: Artigo
Idioma:Inglês
Publicado em: John Wiley and Sons Inc. 2018
Assuntos:
Communications
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6010800/
https://ncbi.nlm.nih.gov/pubmed/29938172
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201700955
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