Advanced GeSn/SiGeSn Group IV Heterostructure Lasers

Growth and characterization of advanced group IV semiconductor materials with CMOS‐compatible applications are demonstrated, both in photonics. The investigated GeSn/SiGeSn heterostructures combine direct bandgap GeSn active layers with indirect gap ternary SiGeSn claddings, a design proven its wort...

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Bibliografski detalji
Izdano u:Adv Sci (Weinh)
Glavni autori: von den Driesch, Nils, Stange, Daniela, Rainko, Denis, Povstugar, Ivan, Zaumseil, Peter, Capellini, Giovanni, Schröder, Thomas, Denneulin, Thibaud, Ikonic, Zoran, Hartmann, Jean‐Michel, Sigg, Hans, Mantl, Siegfried, Grützmacher, Detlev, Buca, Dan
Format: Artigo
Jezik:Inglês
Izdano: John Wiley and Sons Inc. 2018
Teme:
Communications
Online pristup:https://ncbi.nlm.nih.gov/pmc/articles/PMC6010800/
https://ncbi.nlm.nih.gov/pubmed/29938172
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201700955
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