Advanced GeSn/SiGeSn Group IV Heterostructure Lasers

Growth and characterization of advanced group IV semiconductor materials with CMOS‐compatible applications are demonstrated, both in photonics. The investigated GeSn/SiGeSn heterostructures combine direct bandgap GeSn active layers with indirect gap ternary SiGeSn claddings, a design proven its wort...

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Détails bibliographiques
Publié dans:Adv Sci (Weinh)
Auteurs principaux: von den Driesch, Nils, Stange, Daniela, Rainko, Denis, Povstugar, Ivan, Zaumseil, Peter, Capellini, Giovanni, Schröder, Thomas, Denneulin, Thibaud, Ikonic, Zoran, Hartmann, Jean‐Michel, Sigg, Hans, Mantl, Siegfried, Grützmacher, Detlev, Buca, Dan
Format: Artigo
Langue:Inglês
Publié: John Wiley and Sons Inc. 2018
Sujets:
Communications
Accès en ligne:https://ncbi.nlm.nih.gov/pmc/articles/PMC6010800/
https://ncbi.nlm.nih.gov/pubmed/29938172
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201700955
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