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Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures

Since the first demonstration of lasing in direct bandgap GeSn semiconductors, the research efforts for the realization of electrically pumped group IV lasers monolithically integrated on Si have significantly intensified. This led to epitaxial studies of GeSn/SiGeSn hetero- and nanostructures, wher...

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Détails bibliographiques
Publié dans:Sci Rep
Auteurs principaux: Rainko, Denis, Ikonic, Zoran, Vukmirović, Nenad, Stange, Daniela, von den Driesch, Nils, Grützmacher, Detlev, Buca, Dan
Format: Artigo
Langue:Inglês
Publié: Nature Publishing Group UK 2018
Sujets:
Accès en ligne:https://ncbi.nlm.nih.gov/pmc/articles/PMC6197271/
https://ncbi.nlm.nih.gov/pubmed/30348982
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-33820-1
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