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Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures

Since the first demonstration of lasing in direct bandgap GeSn semiconductors, the research efforts for the realization of electrically pumped group IV lasers monolithically integrated on Si have significantly intensified. This led to epitaxial studies of GeSn/SiGeSn hetero- and nanostructures, wher...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Rainko, Denis, Ikonic, Zoran, Vukmirović, Nenad, Stange, Daniela, von den Driesch, Nils, Grützmacher, Detlev, Buca, Dan
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group UK 2018
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6197271/
https://ncbi.nlm.nih.gov/pubmed/30348982
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-33820-1
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