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Structural Property Study for GeSn Thin Films
The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmissi...
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| 出版年: | Materials (Basel) |
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| 主要な著者: | , , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
MDPI
2020
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7476050/ https://ncbi.nlm.nih.gov/pubmed/32824570 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13163645 |
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