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Structural Property Study for GeSn Thin Films
The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmissi...
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| Gepubliceerd in: | Materials (Basel) |
|---|---|
| Hoofdauteurs: | , , , , , , |
| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
MDPI
2020
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| Onderwerpen: | |
| Online toegang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7476050/ https://ncbi.nlm.nih.gov/pubmed/32824570 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13163645 |
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